8/25/2023 0 Comments Plasma cores state of survivalThe impact of chamber wall conditioning on the solar cell performance is demonstrated. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. The deposition process can be monitored in situ by plasma diagnostics. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturingĭirectory of Open Access Journals (Sweden)įull Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition ( PECVD of the active layers. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 Â☌. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The deposition temperature and RF power were fixed at 400 Â☌ and 20 W, respectively. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. Han, Jianqiang Yin, Yi Jun Han, Dong Dong, LiZhenĪlthough plasma enhanced chemical vapor deposition ( PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon A high etching selectivity of SiO 2 over SiN x :H was obtained using highly concentrated buffered HF. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO 2 and SiN x :H. A low etch rate was achieved by increasing the SiH 4 gas flow rate or annealing temperature, or decreasing the NH 3 and N2 gas flow rate. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN x :H by HF solution. The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition ( PECVD) silicon nitride thin film is studied. Tang Longjuan Zhu Yinfang Yang Jinling Li Yan Zhou Wei Xie Jing Liu Yunfei Yang Fuhua International Nuclear Information System (INIS) Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film
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